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| DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. PACKAGE DIMENSIONS 15.7 MAX. FEATURES * High Voltage VCEO = -200 V * DC Current Gain hFE = 70 to 200 * TO-3P Package 1.0 3.20.2 4.7 MAX. 1.5 20.5MAX. 5.0 4 4.50.2 1.00.2 0.60.1 5.45 1 19 MIN. 3.4MAX. 2 3 ORDERING INFORMATION Type Number 2SA1988 Package MP-88 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipantion JunctionTemperature VCBO VCEO VEBO IC (DC) IC (pulse) *1 P2 *2 TJ -200 -200 -5.0 -7.0 -10 100 150 -55 to +150 *2 TC = 25 C V V V A A W C C 2.20.2 5.45 2.80.1 MP-88 1.Base 2.Collector 3.Emitter 4.Fin (Collector) Storage Tempreature Tstg *1 PW 300 s, Duty Cycle 10 % ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Gain Band width Product Output Capacitance SYMBOL ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob 70 20 -0.6 -1.3 40 270 -2.0 -2.0 MIN. TYP. MAX. -50 -50 200 UNIT TEST CONDITIONS VCB = -200 V, IE = 0 VEB = -3.0 V, IC = 0 VCE = -5.0 V, IC = -1.0 A VCE = -5.0 V, IC = -3.5 A IC = -5.0 V, IE = -0.5 V IC = -5.0 V, IE = -0.5 V VCE = -5.0 V, IC = 1.0 mA VCB = -10 V, IC = 0, f = 1.0 MHz A A - - V V MHz pF Pulse Test PW 350 s, Duty Cycle 2 % The information in this document is subject to change without notice. Document No. D11176EJ1V0DS00 (1st edition) Date Published May 1996 P Printed in Japan (c) 1996 2SA1988 CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 80 120 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE S/b 60 40 20 Di ss ipa Lim ited tio n Lim ite d 0 50 100 150 TC - Case Temperature - C TC - Case Temperature - C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE -12 IC - Collector Current - A -10 -8 -6 -4 20mA -2 -1000 0 -10 -20 -30 IB=120mA 100mA 80mA 60mA 40mA Pulsed FORWARD BIAS SAFE OPERATING AREA -100 IC - Collector Current - A -10 IC(Pulse) IC(DC) Di PW ss ipa tio n =1 m s 10ms 100ms 200ms Lim -1 ite d S/ bL im -0.1 -1 TC = 25 C Single Pulse -10 -100 VCE - Collector to Emitter Voltage - V ite d VCE - Collector to Emitter Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - C/W 10 1 Rth (J-C) 0.1 Single Pulse TC=25C 1m 10 m 100 m 1 10 100 1 000 0.01 100 PW - Pulse Width - s 2 2SA1988 COLLECTOR SATURATION VOLTAGE AND BASE SATURATION VOLTAGE VS COLLECTOR CURRENT 10 VCE - Collector Saturation voltage - V VBE - Base Saturation Voltage - V DC CURRENT GAIN VS COLLECTOR CURRENT 1 000 hFE - DC Current Gain 1.0 TA=-25C 25C 75C 150C IC=10IB Pulsed VBE (sat) TA = 150C 75C 25C -25C VCE =-5V Pulsed 100 0.1 TA= 150C 75C 25C -25C VCE (sat) 0.01 0.01 0.1 1.0 10 10 -0.01 -0.1 -1.0 -10 IC - Collector Current - A IC - Collector Current - A OUTOPUT CAPASITANCE VS COLLECTOR TO BASE VOLTAGE IE=0 f=1MHz Cob - Output Cpacitance - pF 1 000 100 10 -0.1 -1.0 -10 -100 -1000 VCB - Collector to Base Voltage -V REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semoconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E 3 2SA1988 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 This datasheet has been download from: www..com Datasheets for electronics components. |
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